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Optimal basis sets for deep levels. I: Potential representations and chemical trendsKANE, E. O.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2254-2259, issn 0163-1829Article

Optimization and preservation of deep-level transient spectroscopy signal responseTHOMAS, H.Journal of applied physics. 1985, Vol 57, Num 10, pp 4619-4622, issn 0021-8979Article

Caractérisation électrique d'hétérostructures et de couches minces semiconductrices par effet Hall. I: Superréseaux GaAs/AlAs. II: Silicium sur isolant = Electrical characterization of semiconductivity heterostructures and thin films using Hall effect. I: GaAs/AlAs. II: Silicon on insulatorJeanjean, Philippe; Robert, J. L.1992, 170 p.Thesis

Defect calculations in semiconductors theoretical principles as illustrated by current calculationsSTONEHAM, A. M.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 51, Num 2, pp 161-176, issn 0141-8637Article

Tetrahedral-site VS hexagonal-site self-interstitial in siliconBOGUSLAWSKI, P; PAPP, G; BALDERESCHI, A et al.Solid state communications. 1984, Vol 52, Num 2, pp 155-158, issn 0038-1098Article

Evidence for interfacial defects in metal-insulator-InP structures induced by the insulator depositionSAUTREUIL, B; VIKTOROVITCH, P; BLANCHET, R et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2322-2324, issn 0021-8979Article

Comparison of an extended interstitial with a split interstitial in siliconWESSER, K; SAHU, S. N; KARINS, J. P et al.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp 157-161, issn 0370-1972Article

Comment on atomic model for the EL2 defect in GaAsMANASREH, M. O.Physical review. B, Condensed matter. 1988, Vol 37, Num 5, pp 2722-2723, issn 0163-1829Article

An inadvertent mid-gap electron level in liquid-phase-epitaxial GaPZAFAR IQBAL, M; JABBAR, A; BABER, N et al.Physica status solidi. A. Applied research. 1987, Vol 99, Num 1, pp K65-K68, issn 0031-8965Article

Neutron-induced trapping levels in aluminum gallium arsenideBARNES, C. E; ZIPPERIAN, T. E; DAWSON, L. R et al.Journal of electronic materials. 1985, Vol 14, Num 2, pp 95-118, issn 0361-5235Article

Distorsion de la structure électronique des complexes lacunes-ions par les atomes de gaz rares dans le siliciumMUDRYJ, A. V; PUSHKARCHUK, A. L; UL'YASHIN, A. G et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 2, pp 360-363, issn 0015-3222Article

Accurate evaluations of thermally stimulated current curves and defect parameters for CdTe crystalsELKOMOSS, S. G; SAMIMI, M; HAGE-ALI, M et al.Journal of applied physics. 1985, Vol 57, Num 12, pp 5313-5319, issn 0021-8979Article

Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InPSIBILLE, A; SUSKI, J.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5551-5553, issn 0163-1829Article

Electroabsorption for deep level to band transitions accompanied by multiphonon processesSCHENK, A; ENDERLEIN, R; SUISKY, D et al.Physica status solidi. B. Basic research. 1985, Vol 131, Num 2, pp 729-739, issn 0370-1972Article

On the nature of metastable color centers in KBrSALOMATOV, V. N; KRISTOFFEL, N. N; PARFIANOVICH, I. A et al.Physica status solidi. B. Basic research. 1984, Vol 122, Num 2, pp K183-K185, issn 0370-1972Article

Calculations for electronic point defects with self-consistent lattice polarisation: the F⁺ centre in MgOVAIL, J. M; HARKER, A. H; HARDING, J. H et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 19, pp 3401-3414, issn 0022-3719Article

Defect and impurity in silicon nitrideROBERTSON, J.Journal of applied physics. 1983, Vol 54, Num 8, pp 4490-4493, issn 0021-8979Article

Defects, Overlay and Focus Performance Improvements with Five Generations of Immersion Exposure SystemsMULKENS, Jan; STREEFKERK, Bob; JASPER, Hans et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 652005.1-652005.11, issn 0277-786X, isbn 978-0-8194-6639-6Conference Paper

Defect level vs. yield and fault coverage in the presence of an unreliable BISTNAKAMURA, Yoshiyuki; SAVIR, Jacob; FUJIWARA, Hideo et al.IEICE transactions on information and systems. 2005, Vol 88, Num 6, pp 1210-1216, issn 0916-8532, 7 p.Article

Etats localisés dans les conditions d'un désordre structuralGINZBURG, L. P.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 9, pp 1629-1634, issn 0015-3222Article

Défauts de non-stœchiométrie et conductivité électrique des monocristaux de WO3GRUNIN, V. S; MAKAROV, V. L; PATRINA, I. B et al.Fizika tverdogo tela. 1988, Vol 30, Num 10, pp 3091-3095, issn 0367-3294Article

On the spatial dependence of the permittivity in the F-centre theoryGERASIMOV, A. B; GOGUA, Z. G; TSERTSVADZE, A. A et al.Physica status solidi. B. Basic research. 1985, Vol 127, Num 1, pp K73-K76, issn 0370-1972Article

On the core of the thermal donors in siliconLINDSTROM, J. L; SVENSSON, B; CORBETT, J. W et al.Physica status solidi. A. Applied research. 1985, Vol 91, Num 2, pp K107-K111, issn 0031-8965Article

Electron structure of oxygen vacancy defect in SiO₂CHERLOV, G. B; FREIDMAN, S. P; ZATSEPIN, A. F et al.Solid state communications. 1985, Vol 55, Num 5, pp 495-497, issn 0038-1098Article